Abstract
A single-shot temporal measurement of pulsed gamma ray using a diode laser has been carried out with the MeV gamma beams at “Qiangguang-I” facility. The gamma-ray temporal profile is encoded to the power of a diode laser by the carrier variation in laser cavity. We analyze the dynamic process of carriers induced by gamma rays and derive a sensitivity expression for the detector based on a diode laser. It shows that the sensitivity is determined by both the gain of resonant cavity and the efficiency of gamma-ray deposition in the diode laser. And the efficiency of depositing gamma-ray is estimated with Monte Carlo methods. The experimental results demonstrate that the detection method with diode lasers can be used for the temporal profile measurement of a MeV pulsed gamma ray source. The relative gamma-ray sensitivity of the detector is estimated at about 1.27×10−22Ccm2 from the experimental results, which agrees with the theoretical predictions.
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