Abstract

CuCl quantum dots (QDs) were fabricated in an aluminoborosilicate glass and hole burning experiment was performed by using the Littman type pulsed dye laser. The influence of SnO, which was added as a reducing agent, on hole burning was studied, and we found that there is almost no hole burning in SnO added sample. The dependence of the hole widths on the radius of QDs was studied, and the hole widths increased with decreasing average radius of QDs. Two kinds of hole burning processes occurred in CuCl doped glass. The hole burnt by a pulsed dye laser was partially recovered within 20 s, and then the remaining hole showed almost permanent life time at 8 K. The relationship between the hole burning process and the surface states and trapping sites in a glass matrix was also discussed.

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