Abstract
We have performed temporally resolved X-ray excited optical luminescence measurements on Si nanowires. By performing Si K edge X-ray excitation measurements we have determined that the short-lifetime components have primarily Si character, while the long-lifetime component stems from the SiO2 shell and SiO2−Si interface. The lifetime of the short-lifetime component decreases with increasing luminescence energy, i.e., as the size of the nanosilicon species decreases.
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