Abstract

Anodic aluminum oxide (AAO) templates are used to fabricate arrays of poly(3-hexylthiophene) (P3HT) pillars. This technique makes it possible to control the dimensions of the pillars, namely their diameters, intervals, and heights, on a tens-of-nanometer scale. These features are essential for enhancing carrier processes such as carrier generation, exciton diffusion, and carrier dissociation and transport. An interdigitated p-n junction between P3HT pillars and fullerene (C60) exhibits a photovoltaic effect. Although the device properties are still preliminary, the experimental results indicate that an AAO template is an effective tool with which to develop organic solar cells because highly regulated nanostructures can be produced on large areas exceeding 100 mm2.

Highlights

  • Bulk heterojunction (BHJ) solar cells [1,2] are superior to single- [3] and double-layer cells [4]

  • These images were obtained after removing the Anodic aluminum oxide (AAO) templates with NaOH solution

  • The diffusion length of the excitons in organic semiconductors is in the few tens-of-nanometer range

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Summary

Introduction

Bulk heterojunction (BHJ) solar cells [1,2] are superior to single- [3] and double-layer cells [4]. The BHJ structure can be formed by mixing a donor and acceptor solution. This straightforward technique is advantageous in terms of increasing the donor/acceptor (D/A) interface, which provides the exciton dissociation sites. A weak point as regards BHJs is that the pathways of the generated carriers are not ensured because of the random phase separation of the respective materials. To ensure exciton dissociation and carrier collection, continuous percolation pathways are required. An ideal structure would be an interdigitated interface, where the donor and acceptor phases are separate. The interdigitated structure must be aligned perpendicularly to connect with the electrodes so as to provide direct pathways for efficient charge transportation [6,7]. The film thicknesses should be around 100 to 200 nm to absorb the incident

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