Abstract
AbstractTemperature‐dependent electroluminescence (EL) intensity of a blue (In,Ga)N single quantum‐well diode has been extensively investigated as a function of current between 2 nA and 10 mA at 20‐300 K. At 300 K the EL external quantum efficiency (ηex) shows a maximum at a current density of ∼1 A/cm2 and droops under higher injection. However, the current density for the ηex maximum significantly decreases with decreasing temperature, for example, to ∼5 × 10–4 A/cm2 at 20 K, with improved maximum EL efficiency due to reduced nonradiative recombination. This low‐temperature enhancement of the ηex droop at lower injection indicates that the droop phenomena is not involved with high‐density carrier effects like Auger nonradiative recombination, but rather linked with the carrier escape under high forward bias conditions due to the presence of internal piezo‐fields in (In,Ga)N quantum‐well heterostructures. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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