Abstract
AbstractLifetime distribution and characteristic lifetime of the defect photoluminescence (PL) in a‐Si:H have been obtained by means of frequency resolved spectroscopy at various temperatures in the range of 10‐200 K. Temperature variation of the radiative recombination rate has been obtained from the intensities and the characteristic lifetimes. The results obtained for the a‐Si:H films as grown and after prolonged illumination have been compared. Thermal quenching of the defect PL becomes more significant after illumination. However the decrease of lifetime with raising temperature becomes less significant after illumination. Increase of the radiative recombination rate with increasing temperature, which is significantly observed above 100 K, becomes less significant after the illumination, indicating that the illumination causes the increase of the density of strongly localised tail states. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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