Abstract
A temperature dependence of delay time and phase velocity of SAW on a layered structure of SiO2/X-115°Y LiTaO3 was studied. A zero temperature coefficient of delay time was obtained for a normalized SiO2 film thickness of k·h≃1.0 at room temperature. The temperature variation of delay time observed was less than 10 ppm in a temperature range from 0°C to 60°C. The bandpass filter characteristics with a center frequency of 170 MHz were also demonstrated.
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