Abstract
We experimentally studied the interaction between a millisecond pulse laser and silicon avalanche photodiode (Si-APD) in an external capacitance circuit. The temperature rise law of Si-APD irradiated by a millisecond pulse laser under different external capacitance conditions was obtained. The results show that the surface temperature rise in a Si-APD is strongly dependent on the external capacitance. That is, the smaller the external capacitance, the smaller the surface temperature rise. The effect of the external capacitance on the surface temperature rise in a Si-APD was investigated for the first time in the field of laser damage. The research results have a certain practical significance for the damage and protection of mid-infrared detectors.
Highlights
Photodiodes in Different ExternalInfrared photodetectors, as an indispensable bridge for the transformation of optical signals into electrical signals, have been widely used in various technical fields [1,2,3,4]
Our research group has studied the temperature rise characteristics of a millisecond pulse laser interacting with a silicon avalanche photodiode (Si-APD)
In In conclusion, rise characteristics characteristicsofof the interaction between a milsecond pulse laser and the Si‐APD in a capacitor circuit have been studied theoretically lisecond pulse laser and the Si-APD in a capacitor circuit have been studied theoretically and experimentally
Summary
As an indispensable bridge for the transformation of optical signals into electrical signals, have been widely used in various technical fields [1,2,3,4]. Among numerous kinds of detectors, APDs have the unique advantages of small size, high sensitivity, and the ability to work at room temperature They are employed in various fields [7,8,9,10], especially in the field of laser detection, where they are most widely used. Our research group has studied the temperature rise characteristics of a millisecond pulse laser interacting with a Si-APD and the capacitance–voltage curve of the damaged Si-APD under the condition of no external capacitance. In this study, based on previous research, an experimental study on the interaction between the millisecond pulse laser and the Si-APD in an external capacitor circuit was carried out. Capacitance Circuits Irradiated by Infrared Millisecond Pulse Laser. It is very significant to study the surface temperature rise in the detector under the action of laser irradiation
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