Abstract
A novel method is presented for measurement of the rise in temperature and thermal rise time of a semiconductor laser diode (LD) under pulsed operation. The technique employs the shift in LD threshold current which occurs with a rise in junction temperature. Practical results are given, showing a rise time of about 10 ns.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
