Abstract
In this study, we explore the effects of several types of confinement potential on the photovoltaic conversion properties of a single-intermediate band solar cell based on (In,Ga)N quantum well emerged in the intrinsic area of the typical p-i-n structure. The ground-state intermediate band position and width associated with electron discrete quantized energy level are derived by using the finite difference approach to solve the impurity-related time-independent Schrödinger equation. Making an allowance for the impurities and holes generally ignored in such studies, open-circuit voltage, current density, fill factor, and photovoltaic efficiency are numerically calculated. The results reveal that the triangular potential profile outperforms rectangular and parabolic profiles in terms of solar cell performance. Furthermore, regardless of the architectural profile, it is revealed that the performance of solar cells diminishes with increasing temperature. However, this shrinkage is strongly-shape dependent.
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