Abstract
An apparently different effect of excitonic luminescence has been observed on the Ga-/N-faces of a free-standing HVPE GaN. The neutral donor-bound exciton (D20X) emission of the N-face is only dominant at lower temperature as compared with that of the Ga-face. Moreover, the temperature-related ratio of the peak intensity of D20X to XAn=1 (a free exciton) is found to be about 2.8, which is in coincidence with the ratio of the average dislocation density of the N-face to the Ga-face confirmed by Cathodoluminiscence images. These details could provide useful information for the design of GaN-based and related devices.
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