Abstract
The thermal desorption of CO from the CdTe(110) surface was studied. The initial rate of desorption exhibits zero order kinetics with an activation energy of 2.8 kval/mol at low surface coverage rising to 4.4 kcal/mol at high surface coverage. The results may be explained in terms of the mechanism of island formation on the semiconductor surface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
