Abstract
Characterization of the effects of thermal processing on the optical and electronic properties of proton implantedn-type GaAs is reported in this paper. The thermal processing includes variations in the substrate temperature during implantation and postimplantation thermal annealing. Infrared reflectivity data indicate that the depths to which the optical changes extend in the as-implanted samples are greatest in the cryogenic implants. Carrier concentration profiles derived from capacitance-voltage measurements are shown to have significant differences depending upon processing history. Existence ofn-type surface layers are noted in high fluence level implants.
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