Temperature performance analysis of intersubband Raman laser in quantum cascade structures

Abstract

In this paper we investigate the effects of temperature on the output characteristics of the intersubband Raman laser (RL) that integrated monolithically with a quantum cascade (QC) laser as an intracavity optical pump. The laser bandstructure is calculated by a self-consistent solution of Schrodinger-Poisson equations, and the employed physical model of carrier transport is based on a five-level carrier scattering rates; a two-level rate equations for the pump laser and a three-level scattering rates to include the stimulated Raman process in the RL. The temperature dependency of the relevant physical effects such as thermal broadening of the intersubband transitions (ISTs), thermally activated phonon emission lifetimes, and thermal backfilling of the final lasing state of the Raman process from the injector are included in the model. Using the presented model, the steady-state, small-signal modulation response and transient device characteristics are investigated for a range of sink temperatures (80–220K). It is found that the main characteristics of the device such as output power, threshold current, Raman modal gain, turn-on delay time and 3-dB optical bandwidth are remarkably affected by the temperature.