Temperature modeling of fully-printed OTFTs based on a modified A-Si: H TFT model

Abstract

This work focuses on modeling low-cost fully-printed OTFTs (Organic Thin Film Transistors). The OTFTs were made on a flexible Polyethylene Naphtalate substrate and used Polytriarylamine and Acene-based diimide for P- and N-Type organic semiconductors respectively. Extraction methods associated with the original A-Si: H TFT (Amorphous-Silicon: Hydrogenated Thin Film Transistors) model were applied to the OTFTs at temperatures ranging from 25°C to 100°C. Due to the A-Si: H TFT model parameters' dependence on temperature, which makes it inappropriate for the presented OTFTs, a modified model is proposed based on their specific parameter dependences. This tailored model matched well when tested with basic organic circuits.