Abstract
A temperature model for the current gain of tunnelling fieldinduced junction transistors (TFIJTs) is presented. It is shown that current gain may have both a positive and negative coefficient, which is related to the base doping concentration and applied voltage. Because of the heavy doping, the energy gap narrowing effect and the carrier Fermi-Dirac statistics distribution are taken into account. On this basis, a novel transistor with temperature-stable current gain is successfully designed.
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