Abstract
We have grown low temperature (LT) GaAs by molecular beam epitaxy in order to study its insulating properties. The LT GaAs exhibits trap filled limited (TFL) conduction. The TFL conduction mechanism is correlated with the measurement of a double peak on X-ray diffraction patterns. Therefore, it is connected to the presence of an excess of arsenic. Diodes realized on LT GaAs were fabricated and measured from 77 K to room temperature. The dependence of the low field resistivity and the breakdown voltage vs. temperature is analysed. The variation with the layer thickness is also shown. In contrast to diodes realized on GaAs grown at higher temperature, the breakdown voltage exhibits excellent uniformity.
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