Abstract
The Heusler alloys Co2MnSi and NiMnSb are predicted to be 100% spin-polarized and are leading candidate materials for spin-injection and detection in hybrid spintronic devices. Co2MnSi is lattice matched with GaAs, whereas NiMnSb is strongly mismatched to GaAs. Here, we study the temperature and thickness dependence of the anomalous Hall (AH) effect in a series of textured, predominantly (001) oriented, sputter deposited Co2MnSi thin films on GaAs, and compare the behaviour to that of a molecular beam epitaxy (MBE) grown NiMnSb film on GaAs (001) with low antisite disorder. We show that the Co2MnSi films have temperature independent AH conductivity, even for the thinnest films with strongly temperature dependent saturation magnetization. We discuss whether a temperature insensitive AH conductivity necessarily indicates that the spin-polarization of charge carriers is also temperature independent.
Highlights
Co2MnSi and NiMnSb are two of the most promising spintronic injector/detector materials
The cross product results in equal and opposite terms for spin-up and spin-down carriers and produces a spatial separation of spin-currents [13, 15]. This results in an anomalous Hall (AH) charge-current, JAH, proportional to (λ · E × S) where S is the total spin-vector of the charge carriers, which is related to Pt
We can conclude that it is rather difficult in practice to differentiate between intrinsic and extrinsic mechanisms purely from the dependence of the anomalous Hall term (AHT) on the resistivity
Summary
Co2MnSi and NiMnSb are two of the most promising spintronic injector/detector materials. We investigate the thickness and temperature dependence of the longitudinal (ρxx) and Hall (ρxy) electrical resistivities in highly (001) aligned Co2MnSi films on lattice-matched GaAs (001).
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