TEMPERATURE INFLUENCE ON THE MAGNETIC SENSITIVE TRANSISTOR STRUCTURES PARAMETERS

Abstract

Semiconductor magnetosensitive transistor structures (MTS), as investigations have shown can be the basis of effective magnetic field sensors, as well as sensors of other physical quantities. However, the practical such sensors application requires high metrological characteristics to investigate the effect of destabilizing factors on the MTS itself. Among the basic these factors is temperature. Its influence is so noticeable that the dependence of the MTS parameters on it can be used for sensors of other physical quantities. A number of papers have been devoted to the study of the temperature influence on the MTS characteristics. However, they are non-systemic in nature and differ in the results, and do not always have sufficient comparisons with the theory and explanation of the nature and mechanisms of temperature influence. This paper sets out the task of a consistent and systematic these problems study in order to optain stronger knowledge of the temperature effect on the MTS characteristics.The experimental and theoretical temperature dependences of the drift MTS (DMTS) current transmission coefficients in the magnetic field, the coordinate of the maximum mangitosensitivity site dependence on temperature, and the dependence of the DMTS mangitosensitivity on temperature for different materials are given.The mechanisms of the temperature influence on the MTS, their characteristics dependences, in particular, the conversion parameters from the point of view of possible use in sensors, are analyzed.