Abstract
Strain management in organometal halide perovskite materials is one of the important strategies to improve charge transport, ion migration and crystallinity of these materials. This work reveals the internal relationship between the perovskite processing temperature and the optoelectronics properties of MAPbI3-xClx perovskite films. The MAPbI3-xClx films have fabricated on various temperature ranges from 80 °C to 180 °C using hot casting technique and explored their structural, surface morphological, optical, and electrical properties. Lattice strain has observed and found to be reduced on increasing the processing temperature and at a particular processing temperature, perovskite films exhibit free of strain. Urbach energy and trap levels have significantly reduced at higher temperatures which confirm the superior optoelectronic feature of perovskite semiconductors. Further, Schottky diodes with device configuration FTO/MAPbI3-xClx/Ag were fabricated and ideality factor, barrier height and reverse saturation current density have been determined in order to explore the charge transport properties of the films.
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