Temperature induced complementary switching in titanium oxide resistive random access memory

D Panda,F M Simanjuntak,T.-Y Tseng

doi:10.1063/1.4959799

Abstract

On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic &lt;50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

Highlights

Feature size (F) of the nonvolatile memory is scaling down toward nanometer size, because of the drive toward faster, smaller, and denser nano-electronics systems
Control sample with TiO2 having same thickness is prepared under the same condition for comparison
Voltage bias is applied on the Pt top electrode, whereas TiN bottom electrode is grounded during electrical measurement

Summary

Introduction

Feature size (F) of the nonvolatile memory is scaling down toward nanometer size, because of the drive toward faster, smaller, and denser nano-electronics systems. Such bipolar-switching characteristics as shown in figure 1(b) are typical for TiO2-x based resistive memory devices. A complementary switching can be observed along with bipolar switching in the 400◦C annealed device only, when the compliance current is increased to 50 μA during voltage sweeping, as shown in figure 2.

Results

Conclusion