Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells

Abstract

This paper elucidates the details of exciton localization dynamics in InGaN/GaN and GaN/AlInN quantum wells (QWs) using Monte Carlo simulation for a wide range of temperatures (10---300 K). We find that the phonon-induced variation of exciton lifetimes has remarkable effects on the photoluminescence (PL) peak position and the line-width. The red-shift of PL peak position at high temperature is clarified. The combined effects of phonon-induced radiative lifetime of excitons and the band-gap shrinkage at high temperature show the most reasonable agreement with the experimentally observed red-shift of the PL peak position. We have also quantitatively explained the temperature dependence of the W-shaped line-width in both InGaN/GaN and GaN/AlInN QWs. These results are highly significant to understand the emission properties of III-nitride QWs optoelectronic devices.