Abstract
In this study, the effects of bismuth (Bi) irradiation on InAs quantum dot (QD) lasers operating in the telecommunication wavelength band were investigated. Highly stacked InAs QDs were grown on an InP(311)B substrate under Bi irradiation, and a broad-area laser was fabricated. In the lasing operation, the threshold currents were almost the same, regardless of Bi irradiation at room temperature. These QD lasers were operated at temperatures between 20 and 75°C, indicating the possibility of high-temperature operation. In addition, the temperature dependence of the oscillation wavelength changed from 0.531 nm/K to 0.168 nm/K using Bi in the temperature range 20-75°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
