Temperature Imposed Sensitivity Issues of Hetero-TFET Based pH Sensor.

Abstract

An underlapped hetero-structure electrolyte Bio-TFET for potential of hydrogen (pH) sensing has been presented in this article. Intersection charge density (Dit) near the substrate-oxide junction can be employed to represent pH value within the simulation. A feasible fabrication scheme for the proposed model is specified here. A detailed simulation is performed with an ATLAS device simulator to examine the efficiency of the projected sensor. The impact of pH alterations on device features akin to the drain current (IDS), threshold potential (VTH), sensitivity regarding voltage (SV), and current (SI) is examined. The effect of phosphate-buffered saline (PBS) concentrations on the pH buffer are also scrutinized. Moreover, the impact of the reference voltage and current (VRef and IRef), and channel doping concentration (NCH) over SV and SI is analyzed methodically. Here, SV attains ≈ 100 mV/pH, which is superior to the Nernstian limit (59 mV/pH) and SI enhances nearly ten times per pH variation. Benchmarking is included to provide a quantitative assessment of the proposed model with the published literature. The impact of temperature on pH buffer, IDS, temporal drift parameters and sensitivities have been emphasized. Finally, the temperature-immunity aspect of the proposed Bio-HTFET based pH sensor is highlighted by comparing sensitivity parameter among state-of-the-art literature. Hence, the recommended pH sensor can be utilized as an outstanding substitute for the succeeding generation of biosensor applications.