Abstract
The theoretical aspects of pyrometry of semitransparent materials are considered. An IR pyrometer for measuring the sapphire and ruby surface temperature has been developed. This technique allows one to investigate the temperature fields ( T fields) when growing sapphire crystals by the horizontal uniaxial crystallization method (HUC). The influence of the construction elements and heat exchange conditions on the T fields has been investigated. It has been shown that in a HUC apparatus the temperature gradient (grad T) reaches a maximum at a distance of ∼30 mm from the growth interface. Variations in T field and grad T during growth processes have been investigated. Experimental data on the supercooling limit of sapphire have been obtained.
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