Abstract
Several ensembles of self-assembled quantum dots (QDs) based on the AlInAsAl/GaAs and InGaAs/GaAs material systems have been investigated using photoluminescence (PL), PL excitation (PLE) and time-resolved PL (TRPL). The influence of the temperature is measured by monitoring sharp spectral features (as narrow as ∼ 90 μeV) obtained when probing the PL of small QD ensembles (few hundreds QDs). Thermionic emission of the photocarriers out of the QD potential is found to be the dominant mechanism leading to the thermal quenching of the PL and temperature-independent linewidths are observed up to the onset of the PL quenching.
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