Temperature Effects on Resistance of Power Devices

Abstract

In recent years, due to the rapid development of integrated circuits, the demand of power devices is increasing. These power devices are often used in mobile phones, power supplies, and computer motherboards. However, for power devices design requirements today, the Withstanding voltage and on-resistance of devices are first required in design. When the device is in operation, the operating environment will cause a rise in temperature. When the temperature rises, the breakdown voltage and on-resistance of a device will change. This paper discusses the structure of device built on a BULK substrate to withstand a breakdown voltage of 200V or more, which is compared with the device built on a SOI substrate. And breakdown voltage and on-resistance of devices are analyzed at various temperatures. It is found that when the device built on a BLUK substrate is tested under a high temperature, it likely causes the high resistance state, this state will cause the device breakdown voltage rapidly declining.