Abstract
The Ga/InP(110) interfaces prepared at room temperature (300K) and low temperature (80K) have been investigated using photoelectron spectroscopy. Strong temperature dependence on the overlayer morphology, interfacial reaction, and Fermi level movement have been observed. In particular, the Fermi level stabilization at the 300K and 80K interfaces shows different patterns. A pinning position around 0.9 eV above the valence band maximum is observed at the 300K interfaces; whereas the Fermi levels are stabilized around 0.75 eV above the valence band maximum at the 80K interfaces. The implication of the Schottky barrier formation is discussed.
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