Abstract

The turn-off characteristics and forward conduction drop of gate turn-off thyristors (GTOs) are examined over a temperature range of -150 to 125/spl deg/C. The forward conduction drop and dynamic performance of these GTOs are discussed and compared to the behavior of other types of thyristors, such as SCRs and MOS-controlled thyristors (MCTs). An analytical description of the forward conduction voltage drop is developed. Particular emphasis is on the low-temperature behavior of the GTOs as it relates to high-temperature superconducting (HTS) power electronics applications. >

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.