Abstract
AbstractTemperature effects of 2210, 1946, and 1831 cm−1 IR absorption peaks in NTD Si:H are measured and analysed. The phonon scattering process is the dominant factor of the temperature effects, while the phonon decomposition process can be neglected. The symmetry, Td, of defect‐complex corresponding to the 2210 cm−1 peak can be transformed into D2d symmetry as temperature rises above 200 K. The transition causes anomalous temperature effects which broaden the linewidth of the peak and destroy its symmetric peak shapes, i.e. shoulders appear on the low frequency sides of the peaks. The symmetric breaking mechanism strongly supports that the V + 4 H model is responsible for the 2210 cm−1 IR absorption peak. The correlation between the temperature‐dependent linewidth and the degeneracy of its vibration mode is discussed.
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