Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

Abstract

The temperature-dependent DC characteristics and noise performance of In 0.49Ga 0.51P/In 0.15Ga 0.85As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm 2 are investigated at 12 GHz with temperature ranging from 300 to 450 K. It is found that the variation of the turn-on voltage for drain-to-gate Schottky diode is −1.05 mV/K and reverse voltages, which are measured at −0.5 mA/mm of gate current is −6 mV/K. The temperature-dependence of pinch-off voltage is −1.01 mV/K and leakage current is 0.043 μA/K. Comparisons of noise performance including minimum noise figure and associated gain between In 0.49Ga 0.51P/In 0.15Ga 0.85As and Al 0.25Ga 0.75As/In 0.15Ga 0.85As low noise PHEMTs are also created. It is found that the high temperature performance of In 0.49Ga 0.51P/In 0.15Ga 0.85As PHEMT is much better than that of Al 0.25Ga 0.75As/In 0.15Ga 0.85As due to the less effects of deep level traps by absence of deep-complex (DX)-center and lower leakage current by higher Schottky barrier and valence band discontinuity.