Abstract
This letter investigates the major differences between planar (2-D) and vertical-channel (3-D) NAND Flash memory arrays in terms of their temperature dependences. Attention is focused on three relevant parameters for memory array operation, namely, cell threshold-voltage, string saturation current, and width of the random telegraph noise distribution. Results highlight that the transition from2-D to 3-D arrays introduced non-negligible changes in the temperature behavior of these parameters, whose origin is traced back to the different channel material of the technologies, i.e., monocrystalline versus polycrystalline silicon.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have