Abstract
PbSe thin films are prepared on glass substrate by a simple evaporation technique at a pressure of 3.33 × 10−3 Pa. The resistivity of the films is determined in the thickness range from 20 to 350 nm. The temperature dependence of resistivity shows some peculiarities. The resistivity shows semiconducting behaviour at temperatures below 390 K and exhibits semimetallic characteristics above 390 K. The thickness dependence of resistivity is found to follow the Fuchs-Sondheimer size effect theory. The activation energy is determined and the aging effect study of the films reveals a low oxygen absorption. Hall coefficient, carrier concentration, and thermoelectric power are also studied. The Hall coefficient shows a positive sign exhibiting p-type carriers. Investigations on thermoelectric power show a positive value which signifies a p-type sample. A preliminary study of the p-type sample exhibits photoconductivity.
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