Temperature effect on carrier transport characteristics in SrTiO3−δ/Si p-n heterojunction

Abstract

A p-n junction has been fabricated by depositing an electron-doped (n-) SrTiO3−δ film on a hole-doped (p-) Si substrate with a two atomic-layers thickness epitaxial SrO buffer layer using laser molecular beam epitaxy technique. Good crystallinity and smooth surface of SrTiO3−δ were confirmed by reflection high-energy electron diffraction and x-ray diffraction. The junction shows good rectifying behavior at room temperature, and strong temperature dependence of current-voltage (I-V) properties in the range of 200–300 K. These results present potential applications in future microelectronic devices based on growing perovskite oxide thin films on conventional semiconductors.