Abstract
In this article, the hydrogenated amorphous silicon (a-Si:H) acted as the sensitive membrane of pH-ISFET. The a-Si:H membrane was deposited by plasma-enhanced chemical vapor deposition (PECVD). In our experiment, we use a Keithley 236 Semiconductor Parameter Analyzer to measure the drain-source current ( I DS) vs. gate voltage ( V G) curve of a-Si:H ISFET over a pH range from 1 to 7 and a temperature range from 25°C to 65°C. According to our experimental results, we can observe that the pH sensitivity of a-Si:H ISFET is proportional to the operating temperature. And then, we can also find that the temperature coefficient of a-Si:H ISFET is proportional to the pH value of buffer solution.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
