Abstract
Temperature dependent transport characterization of Fe/n-Si0.65Ge0.35 Schottky diodes are investigated using current-voltage measurements between 60 K and 280 K. As temperature is decreased, ideality factor increased and apparent barrier height decreased. Following this trend, charge carriers transport through Metal-Semiconductor (MS) interface changes from Thermionic Emission (TE) to Thermionic Field emission (TFE) over barrier height. In addition, evidence is presented about lateral barrier height inhomogeneity at MS contact. Barrier height ϕB0 vs (1/2 kT) plots show double Gaussian distributions (GD) each with its mean barrier height and standard deviation. Modified Richardson plots obtained using this double GD lead to Richardson constant (A*) and ϕB0 in good agreement with theoretical values for Si1-xGex. Interface states density is also strongly temperature dependent indicating some temperature driven restructuring and reordering taking place at MS interface.
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