Abstract
Temperature dependent analysis of electrical characteristics of multiferroics is an important tool to shed light on conduction mechanisms whose knowledge is vital for materials design with appropriate functionality. In this manuscript, we report on the effect of temperature on structural and electrical characteristics of sol-gel derived Cr-doped GaFeO3 ceramics. X-ray diffraction (XRD) shows that the sample retains its orthorhombic (space group: Pc21n) structure without evidence of any structural changes in the temperature range 300 K to 700 K with linear increase in the unit cell volume and lattice parameters. Temperature dependent impedance spectroscopy studies exhibit presence of two relaxation processes in undoped GaFeO3: higher frequency grain relaxation and lower frequency grain boundary relaxation with activation energy of grain boundary conduction being higher than that of grains. Cr-doping of GaFeO3 leads to an increase in the activation energy of conduction, primarily at the grains rendering the material more resistive and hence leading to reduced electrical leakage. This is attributed to reduction in oxygen vacancy concentration upon Cr doping.
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