Temperature dependent shape transformation of Ge nanostructures by the vapor-liquid-solid method

Abstract

A vapor-liquid-solid method has been used to study the temperature dependent growth mechanism of Ge nanostructures on Au-coated Si (100) substrates. The formation of Ge nanodots, nanorods, and nanowires has been observed at different growth temperatures. The diameter of grown nanowires is found to be varying from 40 to 80 nm and that of nanorods from 70 to 90 nm, respectively. A comparative study has been done on three types of samples using x-ray diffraction and Raman spectroscopy. Photoluminescence spectra of grown nanostructures exhibit a broad emission band around 2.6 eV due to oxide related defect states.