Temperature-Dependent Raman Scattering of Silicon Nanowires

Abstract

Silicon nanowires with narrowly distributed diameters of 20-30 nm have been fabricated by chemical vapor deposition on an anodized aluminum oxide (AAO) substrate. The first-order and second-order Raman scatterings of the silicon nanowires have been studied in a temperature range from 123 to 633 K. Both of the first-order and second-order Raman peaks were found to shift and broaden with increasing temperature. The experimental results were analyzed by combining the phonon confinement effect, anharmonic phonon processes and lattice stress effect. It was found that the intensities of the first-order and second-order Raman bands have different dependences on temperature. The value of relative intensities I(2TA)int/I(2TO)int for silicon nanowires was found to be larger than that of bulk silicon, and increase with rising measurement temperature. We ascribe this phenomenon to the participation of phonons with a large wave vector value of Raman scattering caused by both the phonon confinement effect and the temperature effect.