Abstract
In the present study, a theoretical model for the temperature dependence of Raman frequency shift without any adjustable parameters is established. The model builds a relationship between the temperature dependent Raman frequency and the Raman frequency at a reference temperature. To verify the present model, the temperature dependent Raman frequency shifts of Ge, α-Sn, and Si are predicted, which are in excellent agreement with the available experimental results, Balkanski’s theory and Kolesov’s theory. Besides, the model indicates that the variations in special heat with temperature determine the temperature dependent Raman frequency. This work can provide a convenient method to predict the temperature dependent Raman frequency shift for monoatomic crystals.
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