Abstract
AbstractThe profile of the interface state densities (Nss) and series resistances (Rs) effect on capacitance–voltage (C–V) and conductance‐voltage (G/ω–V) of (Ni/Au)/AlxGa1−xN/AlN/GaN heterostructures as a function of the temperature have been investigated at 1 MHz. The admittance method allows us to obtain the parameters characterizing the metal/semiconductor interface phenomena as well as the bulk phenomena. The method revealed that the density of interface states decreases with increasing temperature. Such a behavior of Nss can be attributed to reordering and restructure of surface charges. The value of series Rs decreases with decreasing temperature. This behavior of Rs is in obvious disagreement with that reported in the literature. It is found that the Nss and Rs of the structure are important parameters that strongly influence the electrical parameters of (Ni/Au)/AlxGa1−xN/AlN/GaN(x = 0.22) heterostructures. In addition, in the forward bias region a negative contribution to the capacitance C has been observed, that decreases with the increasing temperature. Copyright © 2010 John Wiley & Sons, Ltd.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
