Abstract
The temperature-dependent photoluminescence (PL) properties of the As-doped (Zn 0.93Mn 0.07)O layer, which showed the stable p-type conductivity with carrier concentration of ∼ 10 18 cm − 3 and carrier mobility of ∼ 10 cm 2 V − 1 s − 1 , were investigated. From fitting of the Bose–Einstein approximation using extracted emission parameters from temperature-dependent PL spectra, it was found that the interaction between exciton and phonon in p-(Zn 0.93Mn 0.07)O:As is higher than that in host material ZnO. This result was confirmed as resulting from the increase of disorder-activated phonon scattering which is attributed to the increase of free carriers donated from implanted As dopants.
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