Abstract
Temperature-dependent photoluminescence (PL) properties of tetraphenyl porphyrin (H2TPP) and Zinc-tetraphenyl porphyrin (ZnTPP) thin films on the silicon substrates has been investigated. The photoluminescence (PL) properties are observed within the temperature range of 163–543 °K. The 405 nm diode laser beam is used to excite the molecule during the photoluminescence measurement. The integrated PL intensity exhibits abnormal behaviour, the intensity decreases with temperature in the temperature range of 163-273 °K, and then followed by the increase in the further temperature range of 273-543 °K. This anomaly reflects the competition between the radiative recombination process and the non-radiative recombination processes, i.e. carrier capture, thermalization, and carrier relaxation processes. The peak energy of 0-0 and 0-1 transitions show a red-shift with temperature, while their full width at half maximum increases.
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