Abstract
Temperature-dependant photoluminescence (PL) properties of CdSe/CdTe quasi-Type-II QDs are studied using steady-state PL spectroscopy. It is observed that the PL intensity decreased as the temperature increased due to non-radiative thermal escapes and surface trap relaxations. The inverse relationship between PL peak energy and the temperature is ascribed to the exciton-phonon coupling and lattice deformation potential. The existence of surface trap relaxation and exciton-phonon coupling are further confirmed with the direct relationship between PL linewidth and temperature up to a certain point. A second peak, which has temperature-dependant properties, is observed at higher energies and it is attributed to the formation of CdTe core during shell growth process.
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