Abstract
We have determined an absolute internal quantum efficiency (ηint) of various alkyl- and phenyl-based polysilanes by photoluminescence (PL) in the temperature range between 10 and 300 K. Larger ηint have been obtained usually in dialkyl-based polysilanes (e.g., 90% at 10 K and 27% at 300 K for polydihexylsilane (PDHS)). The smaller ηint of polymethylphenylsilane (PMPS) turned out to be due to the resonant energy-transfer between main- and side-chains. By introducing branching into Si main-chain in the PMPS, the effect of electronic delocalization on the luminescence characteristics has been investigated. A polydimethylsilane (PDMS) deposited on an indium tin oxide (ITO)-covered glass was electroluminesced (EL) at both 77 and 300 K, indicating a possibility for light emitting applications.
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