Abstract
By measuring magnetoresistance and Hall effect in classically moderate perpendicular magnetic field in Si-MOSFET-type macroscopic antidot array we found a novel effect: nonlinear with field, temperature- and density-dependent Hall resistivity. We discuss qualitative explanation of the phenomenon and suggest that it might originate from strong temperature dependence of the resistivity and mobility in the shells of the antidots.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
