Abstract
To investigate the conduction mechanism in an organic/inorganic heterojunction, poly(1.8-diaminocarbazole) (PDACz) on a p-type silicon substrate in a sandwich configuration were contacted with Al electrodes and temperature-dependent current–voltage measurements performed in the temperature range 280–380 K. It was found that the barrier height decreased and the ideality factor increased with decreasing temperature. Temperature and bias-dependent transition regimes were observed. These anomalies are explained by further analysis of the low- and high-field regions of the current–voltage curves. The trap density Hb and the characteristic trap energy Et were found to be 1.85 × 1017 cm−3 and 25 meV, respectively. Assuming that the trapped carrier density pt is higher than free-carrier density p, it is concluded that hole transport is dominated by space-charge-limited currents.
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