Abstract
High quality YBa2Cu3O7−x films have been grown on MgO epitaxial buffer layers deposited onto a GaAs/AlGaAs heterostructure incorporating a two-dimensional electron gas (2DEG). The critical temperature of the YBa2Cu3O7−x, Tc(0) was ≳80 K, and Jc≳2×104 A/cm2 at 77 K. Electron mobilities and concentrations of 2DEG substrates were measured at different stages in the formation of YBa2Cu3O7−x/MgO/2DEG structure. Room-temperature mobilities and concentrations were unchanged after YBa2Cu3O7−x/MgO deposition, while low-temperature mobilities were slightly degraded. It is found that the degradation of electron mobility is correlated to the high growth temperature of YBa2Cu3O7−x. Since the 2DEG is only 1200 Å from the substrate surface, this constitutes a sensitive demonstration of the viability of the semiconductor substrate under these growth conditions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
