Temperature-Dependent Low-Frequency Noise in Indium–Zinc–Oxide Thin-Film Transistors Down to 10 K

Abstract

The carrier transport mechanisms in indium–zinc–oxide thin-film transistors are investigated in this paper by use of low-frequency noise (LFN). First, LFNs are measured in the range from 10 to 300 K. The measured noises show that the device is varied from an interface-dominated device to a bulk-dominated device at lower temperature, which induce to the variation of the power coefficient of normalized noise against the effective gate voltage. Moreover, the measured noise increases with decreasing temperature in the range of 200–300 K. Below 200 K, the measured noise decreases with the decrement of temperature, which dominated by thermally activated conduction mechanism in the range of 80–200 K and dominated by variable range hopping theory below 80 K. The variations of flat-band voltage spectral density and average Hooge’s parameter with temperature are also extracted and discussed. The calculated fluctuation related defects increase significantly with decreasing temperature.