Abstract
For enhancing hydrogen detecting ability. a high-performance hydrogen sensor based on a high electron mobility transistor structure by utilising a Pd/oxide/Al 0.24 Ga 0.76 As MOS structure is fabricated and investigated. At different temperatures, hydrogen-sensing characteristics of the studied device under steady- and transition-state with different concentration hydrogen gases are measured. Even at an extremely low hydrogen concentration of 4.3 ppm H 2 /air, the current modulation can be found significantly. Furthermore, in comparison with other FET-type hydrogen sensors, under 9970 ppm H 2 /air, the studied device exhibits a much shorter response time of 10.95 s.
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